|
Blue sensitivity enhanced (suited to biomedical applications)
|
|
Type No.
|
Active area
|
Dark current
|
Rise time
|
|
Chip
|
Package
|
Size
|
Area
|
M=100
|
410nm 50Ω
|
|
mm
|
mm2
|
nA
|
ns
|
|
AD800-11
|
TO52S1
|
Ø 0.8
|
0.5
|
1
|
1
|
|
AD1900-11
|
TO5i
|
Ø 1.95
|
3
|
5
|
2
|
|
Red sensitivity enhanced (cut-off frequency up to 3 GHz)
|
|
Type No.
|
Active area
|
Spectral Responsivity
|
Cut-off frequency
|
|
Chip
|
Package
|
Size
|
Area
|
660nm M=100
|
660nm 50Ω
|
|
mm
|
mm2
|
A / W
|
GHz
|
|
AD100-12
|
LCC6.1
|
Ø 0.1
|
0.008
|
50
|
typ. 3, min. 2
|
|
AD100-12
|
LCC6.1f
|
Ø 0.1
|
0.008
|
44
|
typ. 3, min. 2
|
|
AD100-12
|
TO52S1
|
Ø 0.1
|
0.008
|
50
|
typ. 3, min. 2
|
|
AD230-12
|
LCC6.1
|
Ø 0.23
|
0.042
|
50
|
typ. 3, min. 2
|
|
AD230-12
|
LCC6.1f
|
Ø 0.23
|
0.042
|
44
|
typ. 3, min. 2
|
|
AD230-12
|
TO52S1
|
Ø 0.23
|
0.042
|
50
|
typ. 3, min. 2
|
|
AD500-12
|
LCC6.1
|
Ø 0.5
|
0.196
|
50
|
typ. 3, min. 2
|
|
AD500-12
|
LCC6.1f
|
Ø 0.5
|
0.196
|
44
|
typ. 3, min. 2
|
|
AD500-12
|
TO52S1
|
Ø 0.5
|
0.196
|
50
|
typ. 3, min. 2
|
|
Optimized for high cut-off frequencies - 850 nm (optimized for high speeds)
|
|
Type No.
|
Active area
|
Dark current
|
Rise time
|
|
Chip
|
Package
|
Size
|
Area
|
M=100
|
M=100 20V 50Ω
|
|
mm
|
mm2
|
nA
|
ns
|
|
AD100-8
|
LCC6.1
|
Ø 0.1
|
0.008
|
0.05
|
max. 0.18
|
|
AD100-8
|
LCC6.1f
|
Ø 0.1
|
0.008
|
0.05
|
max. 0.18
|
|
AD100-8
|
TO52S1
|
Ø 0.1
|
0.008
|
0.05
|
< 0.18
|
|
AD100-8
|
TO52S3
|
Ø 0.1
|
0.008
|
0.05
|
< 0.18
|
|
AD230-8
|
LCC6.1
|
Ø 0.23
|
0.04
|
0.3
|
0.18
|
|
AD230-8
|
LCC6.1f
|
Ø 0.23
|
0.04
|
0.3
|
0.18
|
|
AD230-8
|
TO52S1
|
Ø 0.23
|
0.04
|
0.3
|
0.18
|
|
AD230-8
|
TO52S3
|
Ø 0.23
|
0.04
|
0.3
|
0.18
|
|
AD500-8
|
LCC6.1
|
Ø 0.5
|
0.2
|
0.5
|
0.35
|
|
AD500-8
|
LCC6.1f
|
Ø 0.5
|
0.2
|
0.5
|
0.35
|
|
AD500-8
|
TO52S1
|
Ø 0.5
|
0.2
|
0.5
|
0.35
|
|
AD500-8
|
TO52S2
|
Ø 0.5
|
0.2
|
0.5
|
0.35
|
|
AD500-8
|
TO52S3
|
Ø 0.5
|
0.2
|
0.5
|
0.35
|
|
AD800-8
|
TO52S1
|
Ø 0.8
|
0.5
|
2
|
0.7
|
|
AD1100-8
|
TO52S1
|
Ø 1.13
|
1
|
4-6
|
1
|
|
AD1900-8
|
TO5i
|
Ø 1.95
|
3
|
15
|
1.4
|
|
AD3000-8
|
TO5i
|
Ø 3
|
7.07
|
30
|
2
|
|
AD5000-8
|
TO8i
|
Ø 5
|
19.63
|
60
|
3
|
|
AD230-8-2.3G
|
TO5
|
AD230-8-2.3G TO5 is a high frequency optical data receiver comprising an Avalanche Silicon Photodiode and a transimpedance amplifier in a hermetically sealed TO5 package.
|
|
AD500-8-1.3G
|
TO5
|
AD500-8-1.3G TO5 is a high frequency optical data receiver comprising an Avalanche Silicon Photodiode and a transimpedance amplifier in a hermetically sealed TO5 package.
|
|
NIR sensitivity enhanced - 900nm (specifically for LIDAR and laser rangefinders)
|
|
Type No.
|
Active area
|
Dark current
|
Rise time
|
|
Chip
|
Package
|
Size
|
Area
|
M=100
|
M=100
|
|
mm
|
mm2
|
nA
|
ns
|
|
AD100-9
|
TO52S1
|
Ø 0.1
|
0.01
|
0.1
|
0.5
|
|
AD100-9
|
TO52S3
|
Ø 0.1
|
0.01
|
0.1
|
0.5
|
|
AD230-9
|
LCC6.1
|
Ø 0.23
|
0.04
|
0.5
|
0.5
|
|
AD230-9
|
LCC6.1f
|
Ø 0.23
|
0.04
|
0.5
|
0.5
|
|
AD230-9
|
TO52S1
|
Ø 0.23
|
0.04
|
0.5
|
0.5
|
|
AD230-9
|
TO52S3
|
Ø 0.23
|
0.04
|
0.5
|
0.5
|
|
AD500-9
|
LCC6.1
|
Ø 0.5
|
0.2
|
0.8
|
0.55
|
|
AD500-9
|
LCC6.1f
|
Ø 0.5
|
0.2
|
0.8
|
0.55
|
|
AD500-9
|
TO52S1
|
Ø 0.5
|
0.2
|
0.8
|
0.55
|
|
AD500-9
|
TO52S1F2
|
Ø 0.5
|
0.2
|
0.8
|
0.55
|
|
AD500-9
|
TO52S2
|
Ø 0.5
|
0.2
|
0.8
|
0.55
|
|
AD500-9
|
TO52S3
|
Ø 0.5
|
0.2
|
0.8
|
0.55
|
|
AD800-9
|
TO52S1
|
Ø 0.8
|
0.5
|
2
|
0.9
|
|
AD1100-9
|
TO52S1
|
Ø 1.13
|
1
|
4
|
1.3
|
|
AD1500-9
|
TO5i
|
Ø 1.5
|
1.77
|
2
|
2
|
|
AD3000-9
|
TO5i
|
Ø 3
|
7.07
|
30
|
2
|
|
AD5000-9
|
TO8i
|
Ø 5
|
19.63
|
60
|
3
|
|
AD230-9-400M
|
TO5
|
AD230-9-400M-TO5 is a high frequency optical data receiver comprising an Avalanche Silicon Photodiode and a transimpedance amplifier in a hermetically sealed TO-5 package.
|
|
AD500-9-400M
|
TO5
|
AD500-9-400M-TO5 is a high frequency optical data receiver comprising an Avalanche Silicon Photodiode and a transimpedance amplifier in a hermetically sealed TO-5 package.
|
|
Multi-Element Array
|
|
25AA0.16-9
|
BGA
|
APD Array 25 (5x5) elements, QE>80% at 760-910nm with PTC
|
|
64AA0.04-9
|
BGA
|
APD Array 64 (8x8) elements, QE>80% at 760-910nm with PTC
|
|
25AA0.04-9
|
BGA
|
APD Array 25 (5x5) elements, QE>80% at 760-910nm with PTC
|
|
16AA0.13-9
|
SOJ22GL
|
APD Array 16 Elements, QE>80% at 760-910nm with NTC
|
|
16AA0.13-9
|
DIL18
|
APD Array 16 Elements, QE>80% at 760-910nm
|
|
16AA0.4-9
|
SOJ22GL
|
APD Array 16 Elements, QE>80% at 760-910nm
|
|
8AA0.4-9
|
SOJ22GL
|
APD Array 8 Elements, QE>80% at 760-910nm with NTC
|
|
QA4000-9
|
TO8Si
|
Quadrant Avalanche Photodiode, QE>80% at 760-910nm
|
|
NIR sensitivity enhanced - 1064nm (specifically for laser rangefinders, targeting systems or any applications using YAG lasers or similar NIR radiation sources)
|
|
Type No.
|
Active area
|
Dark current
|
Rise time
|
|
Chip
|
Package
|
Size
|
Area
|
M=100
|
M=100 1064nm 50Ω
|
|
mm
|
mm2
|
nA
|
ns
|
|
AD500-10
|
TO5i
|
Ø 0.5
|
0.2
|
1.5
|
4
|
|
AD800-10
|
TO5i
|
Ø 0.8
|
0.5
|
3
|
5
|
|
AD1500-10
|
TO5i
|
Ø 1.5
|
1.77
|
7
|
5
|
|
AD4000-10
|
TO8Si
|
Ø 4
|
12.56
|
50
|
6
|
|
AD800-10
|
TO8Si
|
High speed, high gain, low noise, low power consumption hybrid (AD800-10 + TIA)
|
|
Multi-Element Array
|
|
QA4000-10
|
TO8Si
|
Quadrant Avalanche Photodiode, High QE at 850-1070nm
|
