NewOpto offers
PIN Photodiode, which is the active component that converts light into an electrical voltage (photovoltaic effect) or photocurrent. The PIN photodiode is widely used for many kinds of applications, such as security equipment, laser range finder, motion control, analytical instrument, Bio-medical, communication, military and aerospace.
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UV/blue sensitive photodiodes
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Type No.
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Active area
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Dark current
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Rise time
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Chip
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Package
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Size
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Area
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5V
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410nm 5V 50Ω
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mm
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mm2
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nA
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ns
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PS1-2
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TO52
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1.0x1.0
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1
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0.01
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50
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PS1-2
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LCC6.1
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1.0x1.0
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1
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0.01
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50
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PC5-2
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TO5
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Ø 2.52
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5
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0.3
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150
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PS7-2
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TO5
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2.66x2.66
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7
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0.4
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200
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PC10-2
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TO5
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Ø 3.57
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10
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1
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300
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PS13-2
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TO5
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3.5x3.5
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13
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1
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300
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PS33-2
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TO8
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5.7x5.7
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33
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2
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600
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PC50-2
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BNC
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Ø 7.98
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50
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5
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1000
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PS100-2
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BNC
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10x10
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100
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10
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2000
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PS100-2
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CERpin
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10x10
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100
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10
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2000
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Band pass filter modules: PC10-2 TO5i with center wavelength 254nm or 300nm or 350nm
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Blue/green sensitive photodiodes
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Type No.
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Active area
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Dark current
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Rise time
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Chip
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Package
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Size
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Area
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5V
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410nm 5V 50Ω
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mm
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mm2
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nA
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ns
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PC1-6b
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TO52S3
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Ø 1.13
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1
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0.05
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10
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PC5-6b
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TO5
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Ø 2.52
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5
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0.1
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20
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PS7-6b
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TO5
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2.7x2.7
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7
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0.15
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25
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PC10-6b
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TO5
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Ø 3.57
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10
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0.2
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45
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PS13-6b
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TO5
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3.5x3.5
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13
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0.25
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50
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PS33-6b
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TO8
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5.7x5.7
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33
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0.6
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140
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PS100-6b
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CERpin
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10x10
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100
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1
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200
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PS100-6b
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LCC10S
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10x10
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100
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1
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200
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Band pass filter modules: PR20-6b TO5i with center wavelength 488nm or 550nm or 633nm or 680nm
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High speed photodiodes (for fast rise times at low reverse voltages)
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Type No.
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Active area
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Dark current
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Rise time
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Chip
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Package
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Size
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Area
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20V
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850nm 20V 50Ω
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mm
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mm2
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nA
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ns
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PS0.25-5
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LCC6.1
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0.5x0.5
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0.25
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0.1
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0.4
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PS0.25-5
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TO52S3
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0.5x0.5
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0.25
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0.1
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0.4
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PC0.55-5
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TO52S1
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Ø 0.84
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0.55
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0.2
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1
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PC0.55-5
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LCC6.1
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Ø 0.84
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0.55
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0.2
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1
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PS1-5
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LCC6.1
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1.0x1.0
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1
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0.2
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1.5
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PS1-5
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TO52S3
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1.0x1.0
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1
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0.2
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1.5
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PS7-5
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TO5
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2.7x2.7
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7
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0.5
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2
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PS11.9-5
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TO5
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3.45x3.45
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11.9
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1
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3
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PC20-5
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TO8
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Ø 5.05
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20
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2
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3.5
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PS33-5
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TO8
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5.7x5.7
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33
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2
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3.5
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PS100-5
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CERpinS
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10x10
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100
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2
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5
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PS100-5
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LCC10S
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10x10
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100
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2
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5
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High speed photodiodes for low voltages (for low operating voltages between 3 and 5 V, making them ideal for VIS and NIR applications in conjunction with CMOS components)
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Type No.
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Active area
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Dark current
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Rise time
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Chip
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Package
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Size
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Area
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20V
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850nm 20V 50Ω
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mm
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mm2
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nA
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ns
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PS0.25-5t
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LCC6.1
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0.5x0.5
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0.25
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1
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0.4
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PC0.55-5t
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LCC6.1
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Ø 0.84
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0.55
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5
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1
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PC0.55-5t
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T1 3/4
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Ø 0.84
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0.55
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5
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1
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PC0.55-5t
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T1 3/4 black
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Ø 0.84
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0.55
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5
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1
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PS1-5t
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LCC6.1
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1.0x1.0
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1
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1
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1
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IR photodiodes with min. dark current (for low-capacitance light detection as well as for α, β, ϒ and X-radiation detection)
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Type No.
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Active area
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Dark current
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Rise time
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Chip
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Package
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Size
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Area
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10V
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850nm 10V 50Ω
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mm
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mm2
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nA
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ns
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PC1-6
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TO52S1
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Ø 1.13
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1
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0.05
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10
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PC1-6
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TO52S3
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Ø 1.13
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1
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0.05
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10
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PC5-6
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TO5
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Ø 2.52
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5
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0.1
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13
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PS7-6
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TO5
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2.66×2.66
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7
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0.1
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15
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PC10-6
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TO5
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Ø 3.57
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10
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0.2
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20
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PS13-6
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TO5
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3.5×3.5
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13
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0.2
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20
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PC20-6
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TO8
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Ø 5.05
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20
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0.3
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25
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PC50-6
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TO8S
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Ø 7.98
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50
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0.5
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30
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PS100-6
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BNC
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10×10
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100
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0.8
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50
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PS100-6
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CERpinS
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10×10
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100
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0.8
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50
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PS100-6
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LCC10S
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10×10
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100
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0.8
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50
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IR photodiodes with fully depletable (very low capacitance levels)
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Type No.
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Active area
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Dark current
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Rise time
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Chip
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Package
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Size
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Area
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10V
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905nm 10V 50Ω
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mm
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mm2
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nA
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ns
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PC5-7
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TO8i
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Ø 2.52
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5
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0.05
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45
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PC10-7
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TO8i
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Ø 3.57
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10
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0.1
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50
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PC20-7
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TO8Si
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Ø 5.05
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20
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0.2
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50
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PS100-7
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LCC10
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10×10
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100
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1.5
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50
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QP100-7
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LCC10
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10×10
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4×25
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0.5
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50
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Photodiodes for 1064nm (specifically for laser rangefinders, laser-based targeting systems or any applications using YAG lasers or similar NIR radiation sources)
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Type No.
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Active area
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Dark current
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Rise time
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Chip
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Package
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Size
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Area
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150V
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1064nm 150V 50Ω
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mm
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mm2
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nA
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ns
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QP22-Q
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TO8S
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Ø 5.3
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4×5.7
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1.5
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5
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QP45-Q
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TO8S
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6.7×6.7
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4×10.96
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3
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5
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QP154-Q
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TO1032i
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Ø 14.0
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4×38.5
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10
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6
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